Thin film bulk acoustic resonator with a mass loaded perimeter
US7280007B2 · kind B2 · utility
167Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2004 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Apr 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/177
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.