Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit
US7280404B2 · kind B2 · utility
2Cited by
6References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 24, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Mar 24, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3431
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an erase circuit to erase the data of the memory cell in response to detection by the check circuit that the threshold of the first reference cell is smaller than or substantially equal to a predetermined fixed value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.