Method for producing a photodiode contact for a TFA image sensor

US7282382B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS N.V. · NL

Inventors

• Peter Rieve · Windeck, DE
• Konstantin Seibel · Siegen, DE
• Michael Wagner · Nuremberg, DE

Key dates

• Filing date: Mar 23, 2005
• Grant date: Oct 16, 2007
• Expiry date: Jan 25, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermediate metal dielectric component and that has vias in a photoactive zone which are arranged on a pixel grid. Said vias extend through the intermediate metal dielectric component and are linked with respective strip conductors of the CMOS-ASIC circuit. A pixel-grid structured barrier layer, and on top thereof a CMOS metallization, are arranged on the intermediate metal dielectric component. The aim of the invention is to improve the characteristic variables of the photodiode by simple technological means. This object is achieved by removing at least the CMOS metallization present on the CMOS-ASIC circuit in the area of the photoactive zone except for the structured barrier layer and subsequently applying the multilayer system of the photodiode and the conductive transparent contact layer to the CMOS-ASIC circuit.