Method of manufacturing wafer level package type FBAR device
US7282388B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Dec 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing an FBAR device, the device includes a substrate having a certain size, at least one device functional portion performing a resonance function by responding to electrical signals applied from the outside, the device functional portion being formed along a center portion of the substrate while defining a certain air gap therein, plural external electrodes formed on an upper surface of the substrate substantially coming into contact with both opposite edges of the upper surface, the external electrodes being electrically connected to the device functional portion, and a cap bonded onto the substrate so as to function as a cover for covering a remaining portion of the substrate except for the plural external electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.