Fabrication of crystalline materials over substrates
US7282738B2 · kind B2 · utility
2Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | May 21, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.