Light emitting diode and method of fabricating the same
US7282746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2006 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ<β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.