Patent · US Expired

Radiation-emitting semiconductor component

US7283577B2 · kind B2 · utility

8Cited by
4References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2005
Grant dateOct 16, 2007
Priority date
Expiry dateApr 28, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/862
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.