Radiation-emitting semiconductor component
US7283577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2005 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.