Patent · US Expired

Vertical field-effect transistor, method of manufacturing the same, and display device having the same

US7285795B2 · kind B2 · utility

1Cited by

3References

5Claims

0Family size

Assignee

SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

Michael Redecker · Berlin, DE
Joerg Fischer · Laboe, DE
Arthur Mathea · Berlin, DE

Key dates

Filing date	Mar 8, 2005
Grant date	Oct 23, 2007
Priority date	—
Expiry date	May 26, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10K10/491
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided are a vertical field-effect transistor, a method of manufacturing the same, and a display device having the same. The method is highly reproducible and can be used to manufacture a vertical organic field-effect transistor at a low cost. In addition, the method does not require photolithography and a shadow mask. In the vertical field-effect transistor, a source electrode is formed on a substrate, and an insulating layer and discontinuous gate electrodes are formed. Then, a charge carrier block layer, an organic semiconductor material, and a drain electrode are formed. The gate electrodes are formed using nanoparticles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.