LED with series-connected monolithically integrated mesas
US7285801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2004 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Mar 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130′, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.