GaN-based III—V group compound semiconductor device and p-type electrode for the same
US7285857B2 · kind B2 · utility
11Cited by
8References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.