Dual storage node pixel for CMOS sensor
US7286174B1 · kind B1 · utility
31Cited by
17References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Jul 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sensor includes control circuitry and a pixel. The pixel includes a photo site, a first storage node and a second storage node. The control circuitry causes the pixel to transfer a first collected signal from the photo site to the first storage node during a first period, to transfer a second collected signal from the photo site to the second storage node during a second period that follows the first period, and to transfer the first and second collected signals out of the pixel during a third period that follows the second period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.