Method of producing a sputtering target
US7288224B2 · kind B2 · utility
4Cited by
19References
1Claims
0Family size
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Key dates
| Filing date | Sep 25, 2003 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Nov 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of α, β, γ and δ thereof being in the relationship of 0.5≦α<8, 5≦γ≦23, 17≦γ≦38, 32≦δ≦73, α≦γ, and α+β+γ+δ=100, and a method of producing the above sputtering target is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.