Image sensing structure
US7288801B2 · kind B2 · utility
3Cited by
5References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Feb 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A CMOS image sensing structure includes a photodiode, in which an epitaxial layer is on a P-type substrate. The photodiode includes an N-well collection node in the epitaxial layer. An isolation trench is provided around the collection node to provide better control of the width of the collection node. The collection node can be surrounded by P-wells or by epitaxial material. It can also be surrounded by epitaxial material with the isolation trench being outwardly extended to ensure compliance with existing design rules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.