Control of deposition and other processes
US7290589B2 · kind B2 · utility
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10References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2002 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | May 4, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C4/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Material is incrementally deposited using material directed toward a deposition zone. The scan path of the directed material is controlled according to a path plan derived to reduce derivation from an ideal uniform temperature profile for the deposition during the deposition process. A path plan having angled scan passes that intersect (or overcross one another), for example in a mirrorbox path plan, is preferred.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.