Heat shield and crystal growth equipment
US7291225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2005 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.