CCD device having a sequence of electrodes for charge multiplication
US7291821B2 · kind B2 · utility
16Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Mar 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A CCD device includes multiplication elements arranged so as to multiply charge by clocking with a high voltage. An additional region beneath the high voltage electrode is so doped in relation to at least the preceding electrode as to have a higher depleted charge density than under the preceding electrode. This assists in preventing high energy electrodes from encountering the silicon surface of the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.