Electrical interconnect structures for integrated circuits and methods of manufacturing the same
US7294217B2 · kind B2 · utility
11Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2004 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | May 26, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are interconnect structures and methods which utilize a bonding surface comprising copper nitride. The interconnect structures include a bonding surface comprising copper nitride which is effective at preventing oxidation and/or other unwanted corrosion of the underlying conductive material while providing the basis for a high conductivity bond. The copper nitride bonding surface provides a relatively non-conductive, corrosion-resistant bonding surface while at the same time being readily transformed into a conductive layer at or just prior to the time of bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.