Super lattice tunnel junctions
US7294868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2005 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a resistance parameter that is more restrictive to conduction of a current than the resistance parameter of the first semiconductor material. The first semiconductor material can have a critical thickness at which lattice matching of the first semiconductor material causes dislocation. The second semiconductor material can have a critical thickness at which lattice matching of the second semiconductor material causes dislocation that is thicker than the critical thickness of the first semiconductor material. The tunnel junction can be used in a monolithically manufactured photo transmitter and receiver design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.