Bypass gas feed system and method to improve reactant gas flow and film deposition
US7296532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Oct 5, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and reactant gas bypass system for carrying out a plasma enhanced chemical vapor deposition (PECVD) process with improved gas flow stability to avoid unionized reactant precursors and thickness non-uniformities the method including providing a semiconductor process wafer having a process surface within a plasma reactor chamber for carrying out at least one plasma process; supplying at least one reactant gas flow at a selected flow rate to bypass the plasma reactor chamber for a period of time to achieve a pre-determined flow rate stability; and, redirecting the at least one reactant gas flow into the plasma reactor chamber to carry out the at least one plasma process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.