Image transfer process for thin film component definition
US7297470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Aug 11, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.