Method of manufacturing semiconductor device
US7297558B2 · kind B2 · utility
4Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Nov 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on the SiON film (27). As a result, the shape of the surface of the SiON film (27) becomes gentler and deep trenches disappear. Next, an SiON film (28) is formed on the whole surface. A voidless W oxidation preventing insulating film (29) is composed of the SiON (28) film and the SiON film (27).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.