Preparation of CIGS-based solar cells using a buffered electrodeposition bath
US7297868B2 · kind B2 · utility
20Cited by
8References
12Claims
0Family size
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Key dates
| Filing date | Jul 25, 2003 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Oct 15, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.