Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process
US7297976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 29, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/017
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.