Flip chip type nitride semiconductor light emitting device
US7297988B2 · kind B2 · utility
1Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Dec 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.