Hemispherical silicon grain capacitor with variable grain size
US7298002B2 · kind B2 · utility
0Cited by
4References
7Claims
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Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Jun 24, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.