Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices
US7298594B2 · kind B2 · utility
3Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.