Semiconductor laser
US7298769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2006 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | May 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.