Low temperature sintering ceramic composition for high frequency, method of fabricating the same and electronic component
US7300897B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Apr 14, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Apr 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/0306
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A low temperature sintering ceramic composition can be sintered at 850 to 1,000° C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO2 in total: over 60% to 98.6%; Bi2O3: from 1% to under 35%; and Li2O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO2 are contained in the molar ratio of from 1:1 to under 1:2.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.