Semiconductor substrate and semiconductor device fabrication method
US7301169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Nov 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39. When electric breakdown has taken place in either of the first monitor part 14a and the second monitor part 14b, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has take…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.