Group III-nitride light emitting device
US7301173B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | May 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.