High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
US7301185B2 · kind B2 · utility
31Cited by
7References
11Claims
0Family size
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Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Oct 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.