Nanoscale wires and related devices

US7301199B2 · kind B2 · utility

Assignee

• President and Fellows of Harvard College · US

Inventors

• Charles M. Lieber · Lexington, US
• Xiangfeng Duan · Los Angeles, US
• Yi Cui · Stanford, US
• Yu Huang · Los Angeles, US
• Mark Gudiksen · Watertown, US
• Lincoln J. Lauhon · Boston, US
• Jianfang Wang · Hangzhou City, CN
• Hongkun Park · Lexington, US
• Qingqiao Wei · Corvallis, US
• Wenjie Liang · Oakland, US
• David Craig Smith · Lake Oswego, US
• Deli Wang · San Diego, US
• Zhaohui Zhong · Ann Arbor, US

Key dates

• Filing date: Jul 16, 2002
• Grant date: Nov 27, 2007
• Expiry date: Jul 16, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/298
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.