Semiconductor device and method of manufacturing the same
US7301202B2 · kind B2 · utility
6Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jun 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor substrate and has a lower impurity concentration than that of the semiconductor substrate. Pillar regions are formed on the middle semiconductor layer and include semiconductor regions of the first conduction type having a lower impurity concentration than that of the middle semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.