High temperature electronic devices
US7301223B2 · kind B2 · utility
35Cited by
22References
54Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | May 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldCivil engineering
- WIPO sectorOther fields
Abstract
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.