Organic light emitting diode display with insulating film which contains SiO
US7301274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jun 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/122
Abstract
An active matrix type organic light emitting diode display serving as a bottom emission type device coupling out emission of an organic electroluminescence layer from a substrate where thin film transistors are formed or as a top emission type device coupling out the emission on the opposite side to the substrate. In a suitable layer (102, 106, 107) in each device, an insulating film containing SiO is formed. The insulating film is porous with nano pores in the film. The porous insulating film is controlled as to film density, film refractive index, nano pore diameter in film, average nano pore diameter in film and maximum nano pore diameter in film so that the refractive index is lower than that of a transparent electrode or a transparent substrate of the display holding the organic electroluminescence layer therebetween, and nano pores are present in the film. Light scattering effect can be obtained so that emission from the organic electroluminescence layer (110) can be coupled out to the outside efficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.