Temperature dependent switching circuit
US7301745B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Sep 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A temperature dependent switching circuit comprises a first transistor with a threshold voltage Vth having a negative temperature coefficient. A diode having a forward voltage drop with a negative temperature coefficient coupled with its anode connected to the drain of the first transistor and its cathode connected to the gate of the first transistor. A first resistor is coupled between a power supply terminal and the drain of the first transistor. A low voltage supply is terminal connected to the source of the first transistor. A second resistor is coupled between the gate of the first transistor and the low voltage supply terminal. A switching transistor has its source connected to the low voltage supply terminal and its gate coupled to the drain of the first transistor. The drain of the first transistor provides a voltage with a negative temperature coefficient equal to the sum of the forward voltage drop across the diode and the threshold voltage of the first transistor. As the temperature in the circuit rises to a predetermined temperature the voltage at the gate of the switching transistor drops below the threshold voltage for the switching transistor turning off the current …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.