Patent · US Active

Thermal shutdown trip point modification during current limit

US7301746B2 · kind B2 · utility

1Cited by
5References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2005
Grant dateNov 27, 2007
Priority date
Expiry dateJun 30, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K2017/0806
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A thermal shutdown circuit for protecting a main FET that conducts a load current ILOAD. A reference circuit provides a temperature current proportional to temperature. A thermal sensor circuit has a resistor and generates an output signal signaling thermal shutdown when the voltage generated across the resistor by the temperature current exceeds a predetermined value. A sense FET having a size smaller than the main FET conducts a sense current ISENSE proportionately smaller than ILOAD. A current mirror mirrors a scaled current proportional to ISENSE to be conducted through the resistor, the scaled current being scaled so as to cause the voltage generated across the resistor to exceed the predetermined value when ILOAD exceeds a predetermined value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.