Methods for erasing bit cells in a high density data storage device
US7301887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Oct 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/1436
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.