Tuneable unipolar lasers
US7301977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Mar 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged on and/or adjacent to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.