Strain sensors based on nanowire piezoresistor wires and arrays
US7302856B2 · kind B2 · utility
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13References
26Claims
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Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Sep 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/54373
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.