Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
US7304308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2006 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | May 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. Alternatively, a non-insulating organic layer may be between the top electrode and the charge generating layer. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays. A voltage is applied to the top electrode. This voltage may be within the range of 500 V to 2,000 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.