Thyristor circuit and approach for temperature stability
US7304327B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Feb 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Switching operations, such as those used in memory devices, are enhanced using a semiconductor device having a thyristor adapted to switch between conducting and blocking states and operate at low power. According to an example embodiment of the present invention, thyristor characteristics are managed over a broad temperature range using a control circuit for coupling a signal, such as a DC voltage signal, to a portion of a thyristor for controlling temperature-related operation thereof, e.g., for controlling bipolar gains. In one implementation, a control port adaptively adjusts a signal coupled to the thyristor as a function of temperature, such that at relatively low temperatures unwanted increases in holding current (IH) are prevented. In another implementation, the control port couples the signal at relatively high temperature operation for controlling the forward blocking voltage (VFB) in such a manner that a blocking state of the thyristor is held. In still another implementation, a circuit controller is adapted for applying the signal to the thyristor via the control port as a function of temperature by monitoring operation of a reference thyristor. With these approaches, t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.