Passivation structure for ferroelectric thin-film devices
US7304339B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2006 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Sep 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
Ferroelectric thin film devices including a passivation structure to reduce or control a leakage path between two electrodes and along an interface between a ferroelectric thin film layer and a passivation layer are described. Methods for fabricating such devices are also disclosed. The passivation structure includes a first passivation layer that includes an opening exposing a portion of the ferroelectric thin film layer allowing a second passivation layer to contact the thin film layer through the opening. In an exemplary embodiment, the opening is a rectangular ring surrounding an active region of a capacitor. In another exemplary embodiment, the second passivation layer also contacts the second electrode, a portion of which is also exposed through the opening. In another exemplary embodiment, current flows along the interface between the thin film layer and the passivation layer in an integrated resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.