MOS transistor with a deformable gate
US7304358B2 · kind B2 · utility
3Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Sep 15, 2005 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Sep 22, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0109
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.