Semiconductor device with a barrier film which contains manganese
US7304384B2 · kind B2 · utility
59Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.