Luminescent diode

US7307284B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Günther Grönninger · Dietenhofen, DE
• Peter Heidborn · Bad Kötzting, DE

Key dates

• Filing date: May 18, 2001
• Grant date: Dec 11, 2007
• Expiry date: May 18, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A light-emitting diode based on GaAlAs has a window layer (5) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 ×1018 cm−3. This provision lessens the degradation of the light-emitting diode (1).