Semiconductor device including a vertical field effect transistor, having trenches, and a diode
US7307313B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 18, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Jan 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/831
Abstract
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.