Low dielectric materials and methods for making same
US7307343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2002 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Oct 14, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249979
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.