Patterning using wax printing and lift off
US7309563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Aug 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for performing a liftoff operation involves printing a liftoff pattern using low-resolution patterning techniques to form fine feature patterns. The resulting feature size is defined by the spacing between printed patterns rather than the printed pattern size. By controlling the cross-sectional profile of the printed liftoff pattern, mask structures may be formed from the liftoff operation having beneficial etch-mask aperture profiles. For example, a multi-layer printed liftoff pattern can be used to create converging aperture profiles in a patterned layer. The patterned layer can then be used as an etch mask, where the converging aperture profiles result in desirable diverging etched features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.