Semiconductor device, reflection type liquid crystal display device, and reflection type liquid crystal projector
US7309877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Aug 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween. The signal accumulation capacitor (15) has a structure in which high-concentration semiconductor regions (15D) and (15S) of the first conduction type are formed on the semiconductor substrate (11), and an electrode (15G) is formed on the region between the semiconductor regions (15D) and (15S), with an insulating layer (12b) therebetween. A structure may be adopted in which a bias semiconductor region (17) is not provided, and the semiconductor regions (15D) and (15S) are made to serve also as the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.